Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

doi:10.1088/1674-1056/20/11/114220

Abstract Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose (TID) effect. However, their capability of resisting the hot carrier effect (HCE) has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers (the annular source nMOSFETs) are also studied to provide a possible alternative for the designers.

Keywords: annular gate nMOSFETs total ionizing dose effect hot carrier effect annular source nMOSFETs

Received: 11 May 2011
Revised: 26 May 2011
Accepted manuscript online:

PACS:	42.88.+h	(Environmental and radiation effects on optical elements, devices, and systems)
	85.30.Tv	(Field effect devices)
	68.35.Dv	(Composition, segregation; defects and impurities)

Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

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Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰) Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs 2011 Chin. Phys. B 20 114220

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Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

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