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Chin. Phys. B, 2011, Vol. 20(10): 108504    DOI: 10.1088/1674-1056/20/10/108504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Blue InGaN light-emitting diodes with dip-shaped quantum wells

Lu Tai-Ping(卢太平)a), Li Shu-Ti(李述体) a)†, Zhang Kang(张康)a), Liu Chao(刘超)a), Xiao Guo-Wei(肖国伟) b), Zhou Yu-Gang(周玉刚)b), Zheng Shu-Wen(郑树文)a), Yin Yi-An(尹以安)a), Wu Le-Juan(仵乐娟)a), Wang Hai-Long(王海龙)a), and Yang Xiao-Dong(杨孝东)a)
a Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China; b APT Electronics Ltd, Nansha District, Guangzhou 511458, China
Abstract  InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).
Keywords:  GaN-based light-emitting diodes      dip-shaped quantum wells  
Received:  06 April 2011      Revised:  31 May 2011      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  87.15.A- (Theory, modeling, and computer simulation)  
  78.60.Fi (Electroluminescence)  
  73.61.Ey (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

Cite this article: 

Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) Blue InGaN light-emitting diodes with dip-shaped quantum wells 2011 Chin. Phys. B 20 108504

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