Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

doi:10.1088/1674-1056/20/10/107802

Abstract The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.

Keywords: crystal morphology nonpolar GaN Raman metal-organic chemical vapour deposition

Received: 24 May 2011
Revised: 05 July 2011
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), and the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009).

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Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xue Xiao-Yong(薛晓咏), Li Pei-Xian(李培咸), Li Jian-Ting(李建婷), Lin Zhi-Yu(林志宇), Liu Zi-Yang(刘子扬), Ma Jun-Cai(马俊彩), He Qiang(贺强), and Lü Ling(吕玲) Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate 2011 Chin. Phys. B 20 107802

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Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

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