Structural, electrical, and optical properties of ZnInO alloy thin films

doi:10.1088/1674-1056/20/10/106103

Abstract Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.

Keywords: indium-zinc oxide magnetron sputtering In content optical properties electrical properties

Received: 09 February 2011
Revised: 04 May 2011
Accepted manuscript online:

PACS:	61.66.Dk	(Alloys )
	68.55.ag	(Semiconductors)
	73.61.Ga	(II-VI semiconductors)
	78.66.Hf	(II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974174) and the Natural Science Foundation of Zhejiang Province of China (Grant Nos. Z6100117, Z1110057, and Y4080171).

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Cai Xi-Kun(才玺坤), Yuan Zi-Jian(原子健), Zhu Xia-Ming(朱夏明), Wang Xiong(王雄), Zhang Bing-Po(张兵坡), Qiu Dong-Jiang(邱东江), and Wu Hui-Zhen(吴惠桢) Structural, electrical, and optical properties of ZnInO alloy thin films 2011 Chin. Phys. B 20 106103

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Structural, electrical, and optical properties of ZnInO alloy thin films

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