Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

doi:10.1088/1674-1056/20/1/017301

Abstract This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale.

Keywords: strained-Si double-gate MOSFET surface potential short-channel effect

Received: 23 June 2010
Revised: 11 August 2010
Accepted manuscript online:

PACS:	73.20.At	(Surface states, band structure, electron density of states)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Major Science and Technology Innovation, Ministry of Education, China (Grant No. 708083), Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200807010010) and the Fundamental Research Funds for the Central Universities.

Cite this article:

Liu Hong-Xia(刘红侠), Li Jin(李劲),Li Bin(李斌), Cao Lei(曹磊),and Yuan Bo(袁博) Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs 2011 Chin. Phys. B 20 017301

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Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

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