A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

doi:10.1088/1674-1056/20/1/016102

Abstract A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate (DG) MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

Keywords: MOSFETs transistors doping modeling double-gate (DG)

Received: 12 December 2009
Revised: 06 February 2010
Accepted manuscript online:

PACS:	61.44.Br	(Quasicrystals)
	73.40.Ns	(Metal-nonmetal contacts)
	73.40.Ty	(Semiconductor-insulator-semiconductor structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876027), and the Open Funds of Jiangsu Province Key Lab of ASIC Design (JSICK1007).

Cite this article:

He Jin(何进), Liu Feng(刘峰), Zhou Xing-Ye(周幸叶), Zhang Jian(张健), and Zhang Li-Ning(张立宁) A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region 2011 Chin. Phys. B 20 016102

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A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

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