Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (1): 016102    DOI: 10.1088/1674-1056/20/1/016102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
He Jina, Liu Fengb, Zhou Xing-Yeb, Zhang Jianb, Zhang Li-Ningb
a School of Electronics and Information, Nantong University, Nantong 226019, China;The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China;TSRC, Institut; b TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

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