Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

doi:10.1088/1674-1056/19/9/098102

Abstract This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μc-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.

Keywords: phosphorus contamination single chamber microcrystalline silicon solar cells

Received: 29 November 2009
Revised: 20 January 2010
Accepted manuscript online:

PACS:	8115H
	8630J
	7360F

Fund: Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin of China (Grant No. 08ZCKFGX03500), National Basic Research Program of China (Grant Nos. 2006CB202602 and 2006CB202603), National Natural Science Foundation of China (Grant No. 60976051), International Cooperation Project between China–Greece Government (Grant Nos. 2006DFA62390 and 2009DFA62580), and Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).

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Wang Guang-Hong(王光红), Zhang Xiao-Dan(张晓丹), Xu Sheng-Zhi(许盛之), Zheng Xin-Xia(郑新霞), Wei Chang-Chun(魏长春), Sun Jian(孙建), Xiong Shao-Zhen(熊绍珍), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber 2010 Chin. Phys. B 19 098102

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Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

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