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Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix |
| Wu Zhi-Yong(吴志永)†, Liu Ke-Xin(刘克新), and Ren Xiao-Tang(任晓堂) |
| State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China |
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Abstract Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect (QCE) and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds (DBs) on Si NCs was also investigated. For hydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 1017 ions /cm2 is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.
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Received: 04 January 2010
Revised: 26 April 2010
Accepted manuscript online:
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Cite this article:
Wu Zhi-Yong(吴志永), Liu Ke-Xin(刘克新), and Ren Xiao-Tang(任晓堂) Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix 2010 Chin. Phys. B 19 097806
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