Electroluminescence of double-doped diamond thin films

doi:10.1088/1674-1056/19/9/097805

Abstract A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m^{- 2} is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.

Keywords: electroluminescence double-doped diamond thin film microwave plasma chemical vapour deposition electron beam vapour deposition

Received: 14 January 2010
Revised: 09 February 2010
Accepted manuscript online:

PACS:	7860F
	6855
	8115H
	8115G

Fund: Project supported by the Shanghai Education Committee of China (Grant No. 07ZZ95) and the Shanghai Human Resources and Social Security Bureau (Grant No. 2009023).

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Zhang Shi(章诗), Wang Xiao-Ping(王小平), Wang Li-Jun(王丽军), Zhu Yu-Zhuan(朱玉传), Mei Cui-Yu(梅翠玉), Liu Xin-Xin(刘欣欣), Li Huai-Hui(李怀辉), and Gu Ying-Zhan(顾应展) Electroluminescence of double-doped diamond thin films 2010 Chin. Phys. B 19 097805

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Electroluminescence of double-doped diamond thin films

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