The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

doi:10.1088/1674-1056/19/9/097306

Abstract Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal–oxide–semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25–0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction–diffusion model with H⁺related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H⁺generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H⁺generated during NBTI stress.

Keywords: NBTI 90nm p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) model

Received: 18 September 2009
Revised: 19 March 2009
Accepted manuscript online:

PACS:	7340Q
	7300
	7220J

Fund: Project supported by the Fundamental Research Funds in Xidian Universities (Grant No. JY10000904009) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2007BAK25B03)

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Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超) The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors 2010 Chin. Phys. B 19 097306

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

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