The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

doi:10.1088/1674-1056/19/9/097302

Abstract This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance–voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.

Keywords: AlGaN/AlN/GaN HEMT capacitance–voltage characteristics trap

Received: 03 November 2009
Revised: 24 March 2010
Accepted manuscript online:

PACS:	7320D
	7280E
	7360L

Fund: Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500) and the National Natural Science Foundation of China (Grant Nos. 60976059 and 60890191).

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Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂) The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors 2010 Chin. Phys. B 19 097302

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The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

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