Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

doi:10.1088/1674-1056/19/9/097201

Abstract An experimental study on the photocarrier radiometry signals of As⁺ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1×10¹¹–1×10¹⁶/cm²), implantation energy (20–140 keV) and subsequent isochronical annealing temperature (500–1100 $^\circ$C are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.

Keywords: photocarrier radiometry ion implantation thermal annealing silicon

Received: 22 January 2010
Revised: 23 February 2010
Accepted manuscript online:

PACS:	7220J
	7855C
	7320H
	7340L

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60676058).

Cite this article:

Liu Xian-Ming(刘显明), Li Bin-Cheng(李斌成), and Huang Qiu-Ping(黄秋萍) Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers 2010 Chin. Phys. B 19 097201

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Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

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