Effect of unequal injection rates and different hopping rates on asymmetric exclusion processes with junction

doi:10.1088/1674-1056/19/9/090202

Abstract In this paper, the effects of unequal injection rates and different hopping rates on the asymmetric simple exclusion process (ASEP) with a 2-input 1-output junction are studied by using a simple mean-field approach and extensive computer simulations. The steady-state particle currents, the density profiles, and the phase diagrams are obtained. It is shown that with unequal injection rates and different hopping rates, the phase diagram structure is qualitatively changed. The theoretical calculations are in good agreement with Monte Carlo simulations.

Keywords: asymmetric simple exclusion processes mean-field approximation junction different hopping rates

Received: 02 December 2009
Revised: 21 February 2010
Accepted manuscript online:

PACS:

0250

Fund: Project supported by the National Scientific and Technological Support Project, China (Grant No. 2006BAE03A00).

Cite this article:

Xiao Song(肖松), Cai Jiu-Ju(蔡九菊), Liu Fei(刘飞), and Liu Ming-Zhe(刘明哲) Effect of unequal injection rates and different hopping rates on asymmetric exclusion processes with junction 2010 Chin. Phys. B 19 090202

[1]	Widom B, Viovy J L and Defontaines A D 1991 J. Phys. I 1 1759
[2]	Lipowsky R, Klumpp S and Nieuwenhuizen T M 2001 Phys. Rev. Lett. bf 87 108101
[3]	Klumpp S and Lipowsky R 2003 J. Stat. Phys. 113 233
[4]	Parmeggiani A, Franosch T and Frey E 2003 90 086601
[5]	Nishinari K, Okada Y, Schadschneider A and Chowdhury D 2005 Phys. Rev. Lett. 95 118101
[6]	Shaw L B, Zia R K P and Lee K H 2003 Phys. Rev. E 68 021910
[7]	Chowdhury D, Santen L and Schadschneider A 2000 Phys. Rep. 329 199
[8]	Helbing D 2001 Rev. Mod. Phys. bf73 1067
[9]	Xiao S, Cai J J and Liu F 2009 Chin. Phys. B bf18 4613
[10]	Xiao S, Cai J J, Wanf R L, Liu M Z and Liu F 2009 Chin. Phys. B bf18 5103
[11]	Cai J J, Xiao S, Wang R H and Liu F 2009 Chin. Phys. B bf18 5097
[12]	Schadschneider A 1999 Eur. Phys. J. B 10 573
[13]	Schütz G and Domany E 1993 J. Stat. Phys. 72 277
[14]	Evans M R, Rajewsky N and Speer E R 1999 J. Stat. Phys. 95 45
[15]	de Gier J and Nienhuis B 1999 Phys. Rev. E 59 4899
[16]	Rajewsky N, Santen L, Schadschneider A and Schreckenberg M 1998 J. Stat. Phys. 92 151
[17]	Cai Z P, Yuan Y M, Jiang R, Hu M B, Wu Q S and Wu Y H 2008 J. Stat. Mech. P07016
[18]	Popkov V and Peschel I 2000 J. Phys. A 33 3989
[19]	Lee H W, Popkov V and Kim D 1997 J. Phys. A 30 8497
[20]	Fouladvand M E and Lee H W 1999 Phys. Rev. E 60 6465
[21]	Juh'asz R 2007 Phys. Rev. E 76 021117
[22]	Pronina E and Kolomeisky A B 2006 Physica A 372 12
[23]	Pronina E and Kolomeisky A B 2004 J. Phys. A: Math. Gen. 37 9907
[24]	Tsekouras K and Kolomeisky A B 2008 J. Phys. A: Math. Theor. bf 41 095002
[25]	Pronina E and Kolomeisky A B 2005 J. Stat. Mech. P07010
[26]	Wang R, Liu M and Jiang R 2008 Phys. Rev. E 77 051108
[27]	Huang D W 2005 Phys. Rev. E 72 016102
[28]	Wang X, Jiang R, Nishinari K, Hu M B and Wu Q S 2009 Int. J. Mod. Phys. C 20 967

[1]	Enhanced topological superconductivity in an asymmetrical planar Josephson junction Erhu Zhang(张二虎) and Yu Zhang(张钰). Chin. Phys. B, 2023, 32(4): 040307.
[2]	Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Chin. Phys. B, 2023, 32(3): 037302.
[3]	Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2023, 32(3): 037401.
[4]	Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(2): 020701.
[5]	Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Chin. Phys. B, 2023, 32(2): 027302.
[6]	Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu₂ZnSn(S, Se)⁴ solar cell Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Chin. Phys. B, 2023, 32(2): 028801.
[7]	Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Chin. Phys. B, 2023, 32(2): 027504.
[8]	High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[9]	A self-driven photodetector based on a SnS₂/WS₂ van der Waals heterojunction with an Al₂O₃ capping layer Hsiang-Chun Wang(王祥骏), Yuheng Lin(林钰恒), Xiao Liu(刘潇), Xuanhua Deng(邓煊华),Jianwei Ben(贲建伟), Wenjie Yu(俞文杰), Deliang Zhu(朱德亮), and Xinke Liu(刘新科). Chin. Phys. B, 2023, 32(1): 018504.
[10]	Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Chin. Phys. B, 2023, 32(1): 017306.
[11]	Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛). Chin. Phys. B, 2022, 31(9): 097502.
[12]	Josephson vortices and intrinsic Josephson junctions in the layered iron-based superconductor Ca₁₀(Pt₃As₈)((Fe_0.9Pt_0.1)₂As₂)₅ Qiang-Tao Sui(随强涛) and Xiang-Gang Qui(邱祥冈). Chin. Phys. B, 2022, 31(9): 097403.
[13]	Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[14]	Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Chin. Phys. B, 2022, 31(9): 098502.
[15]	Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effect of unequal injection rates and different hopping rates on asymmetric exclusion processes with junction

Cite this article:

Online attention