Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (8): 088101    DOI: 10.1088/1674-1056/19/8/088101
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Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates
Sun Guo-Shenga, Liu Xing-Fanga, Zeng Yi-Pinga, Li Jin-Mina, Wang Leib, Zhao Wan-Shunb, Yang Tingb, Wu Hai-Leib, Yan Guo-Guob, Zhao Yong-Meic, Ning Jinc
a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China

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