Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

doi:10.1088/1674-1056/19/8/087205

Abstract A 240-nm thick Al_0.4In_0.02Ga_0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μ m thick GaN layer used as a buffer layer on a substrate of sapphire (0001). Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AlInGaN ($\chi$_min=1.5%) with GaN buffer layer. The channeling angular scan around an off-normal <1$\bar{2}$13> axis in the {10$\bar{1}$0} plane of the AlInGaN layer is used to determine tetragonal distortion e_T, which is caused by the elastic strain in the AlInGaN. The resulting AlInGaN is subjected to an elastic strain at interfacial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed (e_T = 0).

Keywords: III–V semiconductors Rutherford backscattering and channeling tetragonal distortion

Received: 07 August 2009
Revised: 13 October 2009
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	61.85.+p	(Channeling phenomena (blocking, energy loss, etc.) ?)
	62.20.D-	(Elasticity)
	68.60.Bs	(Mechanical and acoustical properties)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10875004), and the National Basic Research Program of China (Grant No. 2010CB832904).

Cite this article:

G. Husnain, Chen Tian-Xiang(陈田祥), Fa Tao(法涛), and Yao Shu-De(姚淑德) Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling 2010 Chin. Phys. B 19 087205

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Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

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