Sub-nanosecond optical switch based on silicon racetrack resonator

doi:10.1088/1674-1056/19/8/084210

Abstract We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2×10^-3 mm². Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

Keywords: resonator silicon-on-insulator optical switch pre-emphasis technique

Received: 23 January 2010
Revised: 28 February 2010
Accepted manuscript online:

PACS:	42.79.Ta	(Optical computers, logic elements, interconnects, switches; neural networks)
	42.79.Hp	(Optical processors, correlators, and modulators)
	42.82.Bq	(Design and performance testing of integrated-optical systems)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60877036), the National Basic Research Program of China (Grant No. 2006CB302803), the State Key Laboratory of Advanced Optical Communication Systems and Networks, China (Grant No. 2008SH02), and the Knowledge Innovation Program of Institute of Semiconductors, Chinese Academy of Sciences (Grant No. ISCAS2008T10).

Cite this article:

Xu Hai-Hua(徐海华), Huang Qing-Zhong(黄庆忠), Li Yun-Tao(李运涛), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) Sub-nanosecond optical switch based on silicon racetrack resonator 2010 Chin. Phys. B 19 084210

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Sub-nanosecond optical switch based on silicon racetrack resonator

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