Ion-induced kinetic electron emission from 6LiF,7LiF and MgF2 thin films

doi:10.1088/1674-1056/19/8/083401

Abstract Secondary electron yields for Ar⁺ impact on ⁶LiF,⁷LiF and MgF₂ thin films grown on aluminum substrates are measured each as a function of target temperature and projectile energy. Remarkably different behaviours of the electron yields for LiF and MgF₂ films are observed in a temperature range from 25o to 300o. The electron yield of LiF is found to sharply increase with target temperature and to be saturated at about 175o. But the target temperature has no effect on the electron yield of MgF₂. It is also found that for the ion energies greater than 4keV, the electron yield of ⁶LiF is consistently high as compared with that of ⁷LiF that may be due to the enhanced contribution of recoiling ⁶Li atoms to the secondary electron generation. A comparison between the electron yields of MgF₂ and LiF reveales that above a certain ion energy the electron yield of MgF₂ is considerably low as compared with that of LiF. We suggest that the short inelastic mean free path of electrons in MgF₂ can be one of the reasons for its low electron yield.

Keywords: ion-induced electron emission alkali halides electronic stopping electron mean free path

Received: 28 August 2009
Revised: 18 January 2010
Accepted manuscript online:

PACS:	79.20.Hx	(Electron impact: secondary emission)
	68.55.A-	(Nucleation and growth)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)

Fund: Project partially supported by the Higher Education Commission of Pakistan through indigenous PhD program.

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S. Ullah, A. H. Dogar, M. Ashraf, and A. Qayyum Ion-induced kinetic electron emission from ⁶LiF,⁷LiF and MgF₂ thin films 2010 Chin. Phys. B 19 083401

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Ion-induced kinetic electron emission from 6LiF,7LiF and MgF2 thin films

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Ion-induced kinetic electron emission from ⁶LiF,⁷LiF and MgF₂ thin films