AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

doi:10.1088/1674-1056/19/7/077303

Abstract We present an AlGaN/GaN metal—insulator—semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance—voltage (C—V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μ m exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.

Keywords: AlGaN/GaN MIS-HEMT NbAlO high-k

Revised: 16 January 2010
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	77.55.+f
	81.15.Ef
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.35.B-	(Structure of clean surfaces (and surface reconstruction))
	68.37.Ps	(Atomic force microscopy (AFM))

Fund: Project supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191).

Cite this article:

Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞) AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition 2010 Chin. Phys. B 19 077303

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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

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