Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (7): 077103    DOI: 10.1088/1674-1056/19/7/077103
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Electronic band transformation from indirect gap to direct gap in Si—H compound
Ding Jian-Ninga, Yuan Ning-Yia, Wang Jun-Xiongb, Kan Biaob, Chen Xiao-Shuangc
a Center for Low-Dimensional Materials, Micro-Nano Devices and System, Jiangsu Polytechnic University, Changzhou 213164, China;Center for Micro/Nano Science and Technology, Jiangsu University, Zhenjiang 212013, China;Key Laboratory of New Energy Source, Cha; b Center for Micro/Nano Science and Technology, Jiangsu University, Zhenjiang 212013, China; c National Laboratory of Infrared Physics, Shanghai Institute for Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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