One-dimensional continuous analytic potential solution to generic oxide－silicon－oxide system

doi:10.1088/1674-1056/19/6/067304

Abstract A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials

Keywords: surface potential MOSFET modeling oxide--silicon--oxide system

Received: 01 June 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Ty	(Semiconductor-insulator-semiconductor structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~60876027 and 60976066), and the National Science Fund for Distinguished Young Scholars of China (Grant No.~60925015).

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Zhang Jian(张健), He Jin(何进), and Zhang Li-Ning(张立宁) One-dimensional continuous analytic potential solution to generic oxide－silicon－oxide system 2010 Chin. Phys. B 19 067304

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One-dimensional continuous analytic potential solution to generic oxide－silicon－oxide system

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