Fabrication of a 256-bits organic memory by soft x-ray lithography

doi:10.1088/1674-1056/19/5/057204

Abstract This paper reports a procedure of soft x-ray lithography for the fabrication of organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to lithograph positive resist, polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.

Keywords: molecular memory crossbar array soft x-ray lithography electron beam lithography

Received: 13 May 2009
Revised: 13 November 2009
Accepted manuscript online:

PACS:	85.40.Hp	(Lithography, masks and pattern transfer)
	82.45.Qr	(Electrodeposition and electrodissolution)
	82.45.Fk	(Electrodes)
	79.60.Dp	(Adsorbed layers and thin films)

Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB806204), National Natural Science Foundation of China (Grant Nos.~60825403, 90607022, 60676001 and 60676008) and Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No.~20070156S).

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Liu Xing-Hua(刘兴华), Lu Wen-Sheng(鲁闻生), Ji Zhuo-Yu(姬濯宇), Tu De-Yu(涂德钰),Zhu Xiao-Li(朱效立), Xie Chang-Qing(谢常青), and Liu Ming(刘明) Fabrication of a 256-bits organic memory by soft x-ray lithography 2010 Chin. Phys. B 19 057204

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Fabrication of a 256-bits organic memory by soft x-ray lithography

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