Simulation research on offset field-plate used as edge termination in 4H－SiC merged PiN-Schottky diodes

doi:10.1088/1674-1056/19/4/047305

Abstract A new structure of 4H--silicon carbide (SiC) merged PiN-Schottky (MPS) diodes with offset field-plate (FP) as edge termination is developed. To understand the influences of 4H--SiC MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4H--SiC MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.

Keywords: 4H--SiC merged PiN-Schottky offset field-plate reverse characteristics

Received: 28 August 2009
Revised: 22 October 2009
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Fund: Project supported by Applied Materials Innovation Fund (Grant No.~XA-AM-200702) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No.~2008ZDKG-30).

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Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), LÜ Hong-Liang(吕红亮), and Song Qing-Wen(宋庆文) Simulation research on offset field-plate used as edge termination in 4H－SiC merged PiN-Schottky diodes 2010 Chin. Phys. B 19 047305

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Simulation research on offset field-plate used as edge termination in 4H－SiC merged PiN-Schottky diodes

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