Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations

doi:10.1088/1674-1056/19/4/047302

Abstract We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band k $\cdot$ p theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.

Keywords: quantum dot threading dislocation electronic structure absorption efficiency

Received: 25 July 2009
Revised: 05 November 2009
Accepted manuscript online:

PACS:	78.67.Hc	(Quantum dots)
	73.21.La	(Quantum dots)
	77.65.-j	(Piezoelectricity and electromechanical effects)
	71.15.-m	(Methods of electronic structure calculations)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
	61.72.Hh	(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No.~2009AA03Z405), the National Natural Science Foundation of China (Grant Nos.~60908028 and 60971068), the High School Innovation and Introducing Talent Pr

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Ye Han(叶寒), Lu Peng-Fei(芦鹏飞), Yu Zhong-Yuan(俞重远), Yao Wen-Jie(姚文杰), Chen Zhi-Hui(陈智辉), Jia Bo-Yong(贾博雍), and Liu Yu-Min(刘玉敏) Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations 2010 Chin. Phys. B 19 047302

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Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations

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