Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (4): 047205    DOI: 10.1088/1674-1056/19/4/047205
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes
Huang Jun-Yi, Fan Guang-Han, Zheng Shu-Wen, Niu Qiao-Li, Li Shu-Ti, Cao Jian-Xing, Su Jun, Zhang Yong
Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

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