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Chin. Phys. B, 2010, Vol. 19(4): 047205    DOI: 10.1088/1674-1056/19/4/047205
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇)
Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Abstract  This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim$$5.65\times 10^{ - 5}$ $\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500 $^\circ$C. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21 V at an injection current of 20 mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20 mA in comparison with that of LEDs with conventional Ni/Au contacts.
Keywords:  p--GaN      tantalum-doped indium tin oxide (Ta-doped ITO)      Ohmic contact      specific contact resistance  
Received:  25 July 2009      Revised:  29 August 2009      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  73.40.Cg (Contact resistance, contact potential)  
  61.72.uj (III-V and II-VI semiconductors)  
  73.61.Ey (III-V semiconductors)  
Fund: Project supported by Science and Technology Planning Project of Guangdong Province (Grant No.~2007A010501008), the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No.~2009B090300338).

Cite this article: 

Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇) Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes 2010 Chin. Phys. B 19 047205

[1] Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
[2] Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y and Shih K K 1999 Appl. Phys. Lett. 76] 1275
[3] Wang L J, Jiang D S, Liu Z S, Wang Y T, Yang H, Zhang S M, Zhao D G, Zhu J H and Zhu J J 2010 Chin. Phys. B (in press)
[4] Lü L, Gong X and Hao Y 2008 Acta Phys. Sin. 57 1128 (in Chinese)
[5] Ding Z B, Wang K, Chen T X, Chen D and Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese)
[6] Sheu J K, Su Y K, Chi G C, Koh P L, Jou M J and Chang C M 1999 Appl. Phys. Lett. 74] 2340
[7] Suzuki M, Kawakami T, Arai T, Kobayashi S, Koide Y, Uemura T, Shibata N and Murakami M 1999 Appl. Phys. Lett. 74 275
[8] Lin J F, Wu M C, Jou M J, Chang C M, Lee B J and Tsai T Y 1994 Electron. Lett. 30] 1793
[9] Kammler D R, Mason T O, Young D L and Coutts J T 2001 J. Appl. Phys. 90 3263
[10] Kima H K, Yib M S and Lee S N 2009 Thin Solid Films 517] 4039
[11] Nakahara K, Tamura K, Sakai M, Nakagawa D, Ito N, Sonobe M, Takasu H, Tampo H, Fons P, Matsubara K, Iwata K, Yamada A and Niki S 2004 Jpn. J. Appl. Phys. 43 L180
[12] Song J O, Kwak J S, Park Y and Seong T Y 2005 Appl. Phys. Lett. 86 213505
[13] Margalith T, Buchinsky O, Cohen D A, Abare A C, Hansen M and DenBaars S P 1999 Appl. Phys. Lett. 74 3930
[14] Horng R H, Wuu D S, Lien Y C and Lan H W 2001 Appl. Phys. Lett. 79 2925
[15] Lin Y C, Chang S J, Su Y K, Tsai T K, Chang C S and Shei S C 2003 Solid-State Electron 47 849
[16] Pan S M, Tu R C, Fan Y M, Yeh R C and Hsu T J 2003 IEEE Photon. Technol. Lett. 15 646
[17] Chae S W, Kim K C, Kim D H, Kima T G, Yoon S K, Oh B W, Kim D S, Kim H K and Sung Y M 2007 Appl. Phys. Lett. 90 181101
[18] June O S, Kyung K K, Hyunsoo K, Yong H K, Hyun G H, Hyeonseok N and Tae Y S 2007 Mater. Sci. Semicond. Proc. 10 211
[19] Chang K M, Chu J Y and Cheng C C 2005 Solid-State Electron.] 49 1381
[20] Lide D R 1991 Handbook of Chemistry and Physics 72nd ed (Boston: CRC) pp.5-39, 5-54 and 5-56
[21] Lin Y J 2005 J. Vac. Sci. Technol. B 23 48
[22] Zhang B, Dong X P, Xu X F and Wu J S 2008 Phys. Stat. Sol. 205 1162
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