Study of a 4H－SiC epitaxial n-channel MOSFET

doi:10.1088/1674-1056/19/4/047204

Abstract Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.

Keywords: SiC epitaxial layer MOSFET mobility

Received: 13 July 2009
Revised: 25 July 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No.~60876061) and Advanced Research Foundation (Grant No.~51308040302).

Cite this article:

Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门) Study of a 4H－SiC epitaxial n-channel MOSFET 2010 Chin. Phys. B 19 047204

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Study of a 4H－SiC epitaxial n-channel MOSFET

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