Electroluminescence quenching mechanism in Rubrene doped host－guest system

doi:10.1088/1674-1056/19/3/037804

Abstract In this paper, the electroluminescence quenching mechanism in a 5,6,11,12-tetraphenylnaphthacene (Rubrene) doped host--guest system is studied by utilizing a specially designed organic light-emitting diode with an emission layer consisting of a few periodic host/guest structures. Tris-(8-hydroxyquinoline) aluminium (Alq₃) and Rubrene are used as the host and the guest, respectively. The thickness variation of the guest layer in each period enables the study of the effect of molecule aggregation, and the thickness variation of the host layer suggests a long range quenching mechanism of dipole--dipole interaction. The long range quenching mechanism is a F?rster process, and the F?rster radius of Rubrene is between 3 and 10 nm.

Keywords: organic light-emitting diode F?rster process quenching mechanisms

Received: 22 July 2009
Revised: 23 October 2009
Accepted manuscript online:

PACS:	78.60.Fi	(Electroluminescence)
	85.60.Jb	(Light-emitting devices)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~10974013, 10774013, 10804006 and 60825407), the Research Fund for the Doctoral Program of Higher Education, China (Grant Nos.~20070004024 and 20070004031), the Beijing Science and Technology New Star Program, China (Grant No.~2007A024), and the 111 Project (Grant No.~B08002), the Excellent Doctor's Science and Technology Innovation Foundation of Beijing Jiaotong University, China (Grant No.~141049522), and the Research Grants from the Academy of Sciences for the Third World (TWAS).

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Yan Guang(闫光), Zhao Su-Ling(赵谡玲), Xu Zheng(徐征), Zhang Fu-Jun(张福俊), Kong Chao(孔超), Zhu Hai-Na(朱海娜), Song Dan-Dan(宋丹丹), and Xu Xu-Rong(徐叙瑢) Electroluminescence quenching mechanism in Rubrene doped host－guest system 2010 Chin. Phys. B 19 037804

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