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Chin. Phys. B, 2010, Vol. 19(3): 037304    DOI: 10.1088/1674-1056/19/3/037304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武), and Chen Dong-Min(陈东敏)
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400--800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
Keywords:  colossal electroresistance effect      electrical pulse induced resistance switching (EPIR)      transparent resistance random access memory (TRRAM)  
Received:  09 July 2009      Revised:  17 August 2009      Accepted manuscript online: 
PACS:  84.30.Sk (Pulse and digital circuits)  
  81.15.Cd (Deposition by sputtering)  
  68.60.Bs (Mechanical and acoustical properties)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Basic Research Program of China (Grant No.~2007CB925002), the National High Technology Research and Development Program of China (Grant No.~2008AA031401), and Chinese Academy of Sciences.

Cite this article: 

Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武), and Chen Dong-Min(陈东敏) Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches 2010 Chin. Phys. B 19 037304

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