Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

doi:10.1088/1674-1056/19/3/037302

Abstract This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductance was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.

Keywords: GaAs-based metamorphic HEMT maximum current gain cut-off frequency maximum oscillation frequency T-gate

Received: 25 May 2009
Revised: 09 June 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	85.40.Hp	(Lithography, masks and pattern transfer)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No.~G2002CB311901) and Institute of Microelectronics, Chinese Academy of Sciences, Dean Fund (Grant No.~06SB124004).

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Xu Jing-Bo(徐静波), Zhang Hai-Ying(张海英), Fu Xiao-Jun(付晓君), Guo Tian-Yi(郭天义), and Huang Jie(黄杰) Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition 2010 Chin. Phys. B 19 037302

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Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

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