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Chin. Phys. B, 2010, Vol. 19(3): 037301    DOI: 10.1088/1674-1056/19/3/037301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

Wang Hai-Yan(王海艳)a), Duan Zi-Gang(段子刚)b), Liao Wen-Hu(廖文虎)a), and Zhou Guang-Hui(周光辉) a)†
a Department of Physics, Hunan Normal University, Changsha 410081, China; b Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
Abstract  The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.
Keywords:  semiconductor 2DEG      magnetic barriers      spin-dependent transport  
Received:  23 May 2009      Revised:  10 September 2009      Accepted manuscript online: 
PACS:  72.25.Dc (Spin polarized transport in semiconductors)  
  72.25.Mk (Spin transport through interfaces)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  72.20.My (Galvanomagnetic and other magnetotransport effects)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~10574042 and 10974052), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.~20060542002).

Cite this article: 

Wang Hai-Yan(王海艳), Duan Zi-Gang(段子刚), Liao Wen-Hu(廖文虎), and Zhou Guang-Hui(周光辉) Spin-dependent transport for a two-dimensional electron gas with magnetic barriers 2010 Chin. Phys. B 19 037301

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