Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

doi:10.1088/1674-1056/19/3/037203

Abstract This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the `hard gap' energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

Keywords: variable range hopping ferromagnetic semiconductors electrical transport spin polarization

Received: 05 May 2009
Revised: 04 July 2009
Accepted manuscript online:

PACS:	72.25.Dc	(Spin polarized transport in semiconductors)
	75.50.Pp	(Magnetic semiconductors)
	75.50.Dd	(Nonmetallic ferromagnetic materials)
	75.30.Et	(Exchange and superexchange interactions)
	71.20.Nr	(Semiconductor compounds)
	72.20.Dp	(General theory, scattering mechanisms)

Fund: Project supported by the National Basic Research Program of China (Grant Nos.~2007CB924903 and 2009CB929202), and the National Natural Science Foundation of China (Grant No.~10974120).

Cite this article:

Dai You-Yong(代由勇), Yan Shi-Shen(颜世申),Tian Yu-Feng(田玉峰),Chen Yan-Xue(陈延学), Liu Guo-Lei(刘国磊), and Mei Liang-Mo(梅良模) Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors 2010 Chin. Phys. B 19 037203

[1]	Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nat.Mater. 4 173
[2]	Matsumoto Y, Murakami M, Shono T, Hasegawa T, Fukumura T,Kawasaki M, Ahmet P, Chikyow T, Koshihara S Y and Koinuma H 2001Science 291 854
[3]	Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[4]	Shinde S R, Ogale S B, Das Sarma S, Simpson J R, Drew H D,Lofland S E, Lanci C, Buban J P, Browning N D, Kulkarni V N, HigginsJ, Sharma R P, Greene R L and Venkatesan T 2003 Phys. Rev. B 67 115211
[5]	Punnoose A, Hays J, Thurber A, Engelhard M H, Kukkadapu R K,Wang C, Shutthanandan V and Thevuthasan S 2005 Phys. Rev. B72 054402
[6]	Xu Q, Hartmann L, Schmidt H, Hochmuth H, Lorenz M, Schmidt-GrundR, Sturm C, Spemann D and Grundmann M 2006 Phys. Rev. B73 205342
[7]	Andrearczyk T, Jaroszyń ski J, Grabecki G, Dietl T, Fukumura Tand Kawasaki M 2005 Phys. Rev. B 72 121309(R)
[8]	Xu Q, Hartmann L, Schmidt H, Hochmuth H, Lorenz M, Schmidt-GrundR, Sturm C, Spemann D, Grundmann M and Liu Y 2007 J. Appl.Phys. 101 063918
[9]	Reuss F, Frank S, Kirchner C, Kling R, Gruber T and Waag A 2005Appl. Phys. Lett. 87 112104
[10]	Yan S S, Ren C, Wang X, Xin Y, Zhou Z X, Mei L M, Ren M J, ChenY X, Liu Y H and Garmestani H 2004 Appl. Phys. Lett. 84 2376
[11]	Tian Y F, Yan S S, Zhang Y P, Xing P F, Liu G L, Chen Y X andMei L M 2007 J. Phys.: Condens. Matter 19 326206
[12]	Yan S S, Liu J P, Mei L M, Tian Y F, Song H Q, Chen Y X and LiuG L 2006 J. Phys.: Condens. Matter 18 10469
[13]	Tian Y F, Yan S S, Zhang Y P, Song H Q, Ji G, Liu G L, Chen YX, Mei L M, Liu J P, Altuncevahir B and Chakka V 2006 J. Appl.Phys. 100 103901
[14]	Song H Q, Mei L M, Yan S S, Ma X L, Liu J P, Wang Y and Zhang Z2006 J. Appl. Phys. 99 123903
[15]	Tian Y F, Zhang Y P, Yan S S, Liu G L, Chen Y X, Mei L M, Ji Gand Zhang Z 2007 Appl. Phys. Lett. 91 013509
[16]	Peng X D, Zhu T, Wang F W, Huang W G and Cheng Z H 2009 Chin.Phys. B 18 2576
[17]	Hu S J, Yan S S, Lin X L, Yao X X, Chen Y X, Liu G L and Mei LM 2007 Appl. Phys. Lett. 91 262514
[18]	Viret M, Ranno L and Coey J M D 1997 Phys. Rev. B 55 8067
[19]	Ambegaokar V, Halperin B I and Langer J S 1971 Phys. Rev.B 4 2612
[20]	Inoue J and Maekawa S 1996 Phys. Rev. B 53 R11927
[21]	Ju S and Li Z Y 2002 J. Appl. Phys. 92 5281
[22]	Aharony A, Zhang Y and Sarachik M P 1992 Phys. Rev. Lett. 68 3900
[23]	Terry I, Penney T, Molná r S von and Becla P 1992 Phys.Rev. Lett. 69 1800
[24]	Dai P, Zhang Y and Sarachik M P 1992 Phys. Rev. Lett. 69 1804
[25]	Chicon R, Ortu\ {n o M and Pollak M 1988 Phys. Rev. B 37 10520
[26]	Morizur J-F, Ono Y, Kageshima H, Inokawa H and Yamaguchi H 2007Phys. Rev. Lett. 98 166601
[27]	Efros A L and Shklovskii B I1975 J. Phys. C 8 L49
[28]	Dietl T, Haury A and Merle d'Aubigné Y 1997 Phys.Rev. B 55 R3347
[29]	Shklovskii B I and Efros A L 1984 Electronic Properties ofDoped Semiconductors (Berlin: Springer-Verlag) Chapter 9
[30]	Mott N F 1968 J. Non-Cryst. Solids 1 1

[1]	Current spin polarization of a platform molecule with compression effect Zhi Yang(羊志), Feng Sun(孙峰), Deng-Hui Chen(陈登辉), Zi-Qun Wang(王子群), Chuan-Kui Wang(王传奎), Zong-Liang Li(李宗良), and Shuai Qiu(邱帅). Chin. Phys. B, 2022, 31(7): 077202.
[2]	Half-metallicity induced by out-of-plane electric field on phosphorene nanoribbons Xiao-Fang Ouyang(欧阳小芳) and Lu Wang(王路). Chin. Phys. B, 2022, 31(7): 077304.
[3]	Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs Wen-Chong Li(李文充), Ling-Xiao Zhao(赵凌霄), Hai-Jun Zhao(赵海军),Gen-Fu Chen(陈根富), and Zhi-Xiang Shi(施智祥). Chin. Phys. B, 2022, 31(5): 057103.
[4]	Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias Sai-Yan Chen(陈赛艳), Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽). Chin. Phys. B, 2022, 31(1): 017201.
[5]	Optical state selection process with optical pumping in a cesium atomic fountain clock Lei Han(韩蕾), Fang Fang(房芳), Wei-Liang Chen(陈伟亮), Kun Liu(刘昆), Ya-Ni Zuo(左娅妮), Fa-Song Zheng(郑发松), Shao-Yang Dai(戴少阳), and Tian-Chu Li(李天初). Chin. Phys. B, 2021, 30(8): 080602.
[6]	Structural and electrical transport properties of charge density wave material LaAgSb₂ under high pressure Bowen Zhang(张博文), Chao An(安超), Xuliang Chen(陈绪亮), Ying Zhou(周颖), Yonghui Zhou(周永惠), Yifang Yuan(袁亦方), Chunhua Chen(陈春华), Lili Zhang(张丽丽), Xiaoping Yang(杨晓萍), and Zhaorong Yang(杨昭荣). Chin. Phys. B, 2021, 30(7): 076201.
[7]	Evolution of electrical and magnetotransport properties with lattice strain in La_0.7Sr_0.3MnO₃ film Zhi-Bin Ling(令志斌), Qing-Ye Zhang(张庆业), Cheng-Peng Yang(杨成鹏), Xiao-Tian Li(李晓天), Wen-Shuang Liang(梁文双), Yi-Qian Wang(王乙潜), Huai-Wen Yang(杨怀文), Ji-Rong Sun(孙继荣). Chin. Phys. B, 2020, 29(9): 096802.
[8]	Spin-exchange relaxation of naturally abundant Rb in a K-Rb-²¹Ne self-compensated atomic comagnetometer Yan Lu(卢妍), Yueyang Zhai(翟跃阳), Yong Zhang(张勇), Wenfeng Fan(范文峰), Li Xing(邢力), Wei Quan(全伟). Chin. Phys. B, 2020, 29(4): 043204.
[9]	Low-energy (40 keV) proton irradiation of YBa₂Cu₃O_7-x thin films:Micro-Raman characterization and electrical transport properties San-Sheng Wang(王三胜), Fang Li(李方), Han Wu(吴晗), Yu Zhang(张玉), Suleman Mu?ammad(穆罕默德苏尔曼), Peng Zhao(赵鹏), Xiao-Yun Le(乐小云), Zhi-Song Xiao(肖志松), Li-Xiang Jiang(姜利祥), Xue-Dong Ou(欧学东), Xiao-Ping Ouyang(欧阳晓平). Chin. Phys. B, 2019, 28(2): 027401.
[10]	Structural and electrical transport properties of Dirac-like semimetal PdSn₄ under high pressure Bowen Zhang(张博文), Chao An(安超), Yonghui Zhou(周永惠), Xuliang Chen(陈绪亮), Ying Zhou(周颖), Chunhua Chen(陈春华), Yifang Yuan(袁亦方), Zhaorong Yang(杨昭荣). Chin. Phys. B, 2019, 28(12): 126202.
[11]	Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华). Chin. Phys. B, 2019, 28(10): 107303.
[12]	Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors Shengli Guo(郭胜利), Fanlong Ning(宁凡龙). Chin. Phys. B, 2018, 27(9): 097502.
[13]	Excellent thermal stability and thermoelectric properties of Pnma-phase SnSe in middle temperature aerobic environment Yu Tang(唐语), Decong Li(李德聪), Zhong Chen(陈钟), Shuping Deng(邓书平), Luqi Sun(孙璐琪), Wenting Liu(刘文婷), Lanxian Shen(申兰先), Shukang Deng(邓书康). Chin. Phys. B, 2018, 27(11): 118105.
[14]	Two types of ground-state bright solitons in a coupled harmonically trapped pseudo-spin polarization Bose–Einstein condensate T F Xu(徐天赋). Chin. Phys. B, 2018, 27(1): 016702.
[15]	Spin polarization and dispersion effects in emergence of roaming transition state for nitrobenzene isomerization Zhi-Yuan Zhang(张志远), Wan-Run Jiang(姜万润), Bo Wang(王波), Yan-Qiang Yang(杨延强), Zhi-Gang Wang(王志刚). Chin. Phys. B, 2018, 27(1): 013102.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

Cite this article:

Online attention