High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

doi:10.1088/1674-1056/19/3/037106

Abstract This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafluorophthalocyaninatocopper (F₁₆CuPc)/copper phthalocyanine (CuPc) and F₁₆CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm²/(V.s) was obtained from F₁₆CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F₁₆CuPc/CuPc-based transistor is better than that of F₁₆CuPc/pentacene. This is attributed to the morphologic match of two organic components.

Keywords: n-channel heterojunction effect surface modification

Received: 29 May 2009
Revised: 10 June 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	68.37.Ps	(Atomic force microscopy (AFM))

Fund: Project supported by the National Natural Science Foundation of China (Grant No.~60806007), the Shanghai `Post-Qi-Ming-Xing Plan' for Young Scientists, China (Grant No.~07QA14023), and the Shanghai Committee of Science and Technology (Grant Nos.~08DZ1140702 and 08520511200).

Cite this article:

Cao Jin(曹进), Hong Fei(洪飞), Xing Fei-Fei(邢菲菲), Gu Wen(顾文), Guo Xin-An(郭新安), Zhang Hao(张浩), Wei Bin(魏斌), Zhang Jian-Hua(张建华), and Wang Jun(王军) High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification 2010 Chin. Phys. B 19 037106

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High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

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