Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films

doi:10.1088/1674-1056/19/3/036802

Abstract Polycrystalline ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films are prepared on Pt/Ti/SiO₂/Si substrates by the conventional metalorganic decomposition method. It is observed that with the increase of switching pulse width, the remnant polarisation and the coercive field increase. A wider switching pulse can result in poorer fatigue properties, which comes from more charged defects diffusing to and being trapped on domain walls. On the other hand, when the compressive stress is applied to films, the fatigue properties can be improved. This phenomenon is due to the reorientation of domains under stress.

Keywords: ferroelectric films polarisation domains

Received: 03 June 2009
Revised: 28 July 2009
Accepted manuscript online:

PACS:	77.55.+f
	77.80.Dj	(Domain structure; hysteresis)
	77.84.Dy
	77.22.Ej	(Polarization and depolarization)
	68.60.Bs	(Mechanical and acoustical properties)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant No.~50871029), the National Basic Research Program of China (Grant Nos.~2010CB923401 and 2009CB929501) and the Cyanine-Project Foundation of Jiangsu Province of China (Grant No.~1107020060).

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Wu Xiu-Mei(吴秀梅), Chen-Hua(陈华), Zhai-Ya(翟亚), Lu Xiao-Mei(吕笑梅), Liu Yun-Fei(刘云飞), and Zhu Jin-Song(朱劲松) Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films 2010 Chin. Phys. B 19 036802

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Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films

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Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films