Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

doi:10.1088/1674-1056/19/3/036801

Abstract We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Keywords: GaN Si (111) substrate metalorganic chemical vapour deposition AlN buffer layer AlGaN interlayer

Received: 22 April 2009
Revised: 27 May 2009
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.05.Ea	(III-V semiconductors)
	68.60.Bs	(Mechanical and acoustical properties)
	61.72.Ff	(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~60506001, 60476021, 60576003, 60776047 and 60836003), the National Basic Research Program of China (Grant No.~2007CB936700), and the Project of Technological Research and Development of Hebei Province, China (Grant No.~07215134).

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Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉) Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 2010 Chin. Phys. B 19 036801

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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

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