Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

doi:10.1088/1674-1056/19/2/027202

Abstract Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

Keywords: doping ZnO photoluminescence

Received: 03 August 2009
Revised: 29 September 2009
Accepted manuscript online:

PACS:	75.80.+q	(Magnetomechanical effects, magnetostriction)
	77.65.Fs	(Electromechanical resonance; quartz resonators)
	72.80.Tm	(Composite materials)
	07.07.Df	(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

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Long Xue(龙雪), Li Xaing(李祥), Lin Peng-Ting(蔺彭婷), Cheng Xing-Wang(程兴旺), Liu Ying(刘颖), and Cao Chuan-Bao(曹传宝) Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films 2010 Chin. Phys. B 19 027202

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Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

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