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Chin. Phys. B, 2010, Vol. 19(12): 127204    DOI: 10.1088/1674-1056/19/12/127204
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

Huang Zheng(黄征), Wu Li-Li(武莉莉), Li Bing(黎兵), Hao Xia(郝霞), He Jian-Xiong(贺剑雄), Feng Liang-Huan(冯良桓), Li Wei(李卫), Zhang Jing-Quan(张静全), and Cai Yap-Ping(蔡亚平)
College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Abstract  In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 $^\circ$C exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln($\sigma$dark) ~1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 $^\circ$C without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 $^\circ$C has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.
Keywords:  AlSb thin films      magnetron sputtering      solar cells  
Received:  05 January 2010      Revised:  10 June 2010      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  71.20.Nr (Semiconductor compounds)  
  73.61.Ey (III-V semiconductors)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  78.66.Fd (III-V semiconductors)  
  81.15.Cd (Deposition by sputtering)  
Fund: Project supported by the National High Technology Research and Development Program (863 Program) of China (Grant No. 2006AA05Z418).

Cite this article: 

Huang Zheng(黄征), Wu Li-Li(武莉莉), Li Bing(黎兵), Hao Xia(郝霞), He Jian-Xiong(贺剑雄), Feng Liang-Huan(冯良桓), Li Wei(李卫), Zhang Jing-Quan(张静全), and Cai Yap-Ping(蔡亚平) The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing 2010 Chin. Phys. B 19 127204

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