A novel highly efficient grating coupler with large filling factor used for optoelectronic integration

doi:10.1088/1674-1056/19/12/124214

Abstract A novel highly efficient grating coupler with large filling factor and deep etching is proposed in silicon-on-insulator for near vertical coupling between the rib waveguide and optical fibre. The deep slots acting as high efficient scattering centres are analysed and optimized. As high as 60% coupling efficiency at telecom wavelength of 1550-nm and 3-dB bandwidth of 61 nm are predicted by simulation. A peak coupling efficiency of 42.1% at wavelength 1546-nm and 3-dB bandwidth of 37.6 nm are obtained experimentally.

Keywords: silicon photonics silicon-on-insulator grating coupler

Received: 09 May 2010
Revised: 02 June 2010
Accepted manuscript online:

PACS:	42.79.Dj	(Gratings)
	42.82.Bq	(Design and performance testing of integrated-optical systems)
	42.82.Et	(Waveguides, couplers, and arrays)

Fund: Project supported in part by the National Natural Science Foundation of China (Grant No. 60877036), the National Basic Research Program of China (Grant No. 2006CB302803), the Foundation of the State Key Laboratory of Advanced Optical Communication Systems and Networks, China (Grant No. 2008SH02) and the Knowledge Innovation Program of Institute of Semiconductors, Chinese Academy of Sciences (Grant No. ISCAS2008T10).

Cite this article:

Zhou Liang(周亮), Li Zhi-Yong(李智勇), and Zhu Yu(朱宇), Li Yun-Tao(李运涛), Fan Zhong-Cao(樊中朝), Han Wei-Hua(韩伟华), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) A novel highly efficient grating coupler with large filling factor used for optoelectronic integration 2010 Chin. Phys. B 19 124214

[1]	Bogaerts W, Baets R, Dumon P, Wiaux V, Beckx S, Taillaert D, Luyssaert B, Van Campenhout J, Bienstman P and Thourhout D V 2005 J. Lightwave Technol. 23 401
[2]	Zhu Y, Xu X J, Li Z Y, Zhou L, Han W H, Fan Z C, Yu Y D and Yu J Z 2010 Chin. Phys. B 19 014219
[3]	Taillaert D, Laere F V, Ayre M, Bogaerts W, Thourhout D V, Bienstman P and Baets R 2006 Jpn. J. Appl. Phys. 45 6071
[4]	Van Laere F, Roelkens G, Ayre M, Schrauwen J, Taillaert D, Thourhout D V, Krauss T F and Baets R 2007 J. Lightwave Technol. 25 151
[5]	Roelkens G, Vermeulen D, Thourhout D V, Baets R, Brision S, Lyan P, Gautier P and Fédéli J M 2008 Appl. Phys. Lett. 92 131101
[6]	Schmid B, Petrov A and Eich M 2009 Opt. Express 17 11066
[7]	Liu Liu, Pu Minhao, Yvind K and Hvam J M 2010 Appl. Phys. Lett. 96 051126
[8]	Bolten J, Hofrichter J, Moll N, Schoenberger S, Horst F, Offrein B J, Wahlbrink T, Mollenhauer T and Kurz H 2009 Microelectronic Engineering 86 1114
[9]	Green W M J, Rooks M J, Sekaric L and Vlasov Y A 2009 Opt. Express 15 17106
[10]	Manipatruni S, Xu Q F, Schmidt B, Shakya J and Lipson M 2007 IEEE LEOS Ann. Meeting Conference Proc.
[11]	Xu X J, Chen S W, Xu H H, Sun Y, Yu Y D, Yu J Z and Wang Q M 2009 Chin. Phys. B 18 3900
[12]	Bienstman P, CAMFR [online] available at http://camfr.sourceforge.net

[1]	Impact of STI indium implantation on reliability of gate oxide Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[2]	High efficiency, small size, and large bandwidth vertical interlayer waveguide coupler Shao-Yang Li(李绍洋), Liang-Liang Wang(王亮亮), Dan Wu(吴丹), Jin You(游金), Yue Wang(王玥), Jia-Shun Zhang(张家顺), Xiao-Jie Yin(尹小杰), Jun-Ming An(安俊明), and Yuan-Da Wu(吴远大). Chin. Phys. B, 2022, 31(2): 024203.
[3]	Polarization-independent silicon photonic grating coupler for large spatial light spots Lijun Yang(杨丽君), Xiaoyan Hu(胡小燕), Bin Li(李斌), and Jing Cao(曹静). Chin. Phys. B, 2021, 30(2): 024206.
[4]	A 32-channel 100 GHz wavelength division multiplexer by interleaving two silicon arrayed waveguide gratings Changjian Xie(解长健), Xihua Zou (邹喜华), Fang Zou(邹放), Lianshan Yan(闫连山), Wei Pan(潘炜), and Yong Zhang(张永). Chin. Phys. B, 2021, 30(12): 120703.
[5]	Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣). Chin. Phys. B, 2020, 29(2): 028501.
[6]	Research on the radiation hardened SOI devices with single-step Si ion implantation Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(4): 048503.
[7]	Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选). Chin. Phys. B, 2018, 27(2): 028501.
[8]	16-channel dual-tuning wavelength division multiplexer/demultiplexer Pei Yuan(袁配), Yue Wang(王玥), Yuan-Da Wu(吴远大), Jun-Ming An(安俊明), Xiong-Wei Hu(胡雄伟). Chin. Phys. B, 2018, 27(12): 124208.
[9]	1.3-μm InAs/GaAs quantum dots grown on Si substrates Fu-Hui Shao(邵福会), Yi Zhang(张一), Xiang-Bin Su(苏向斌), Sheng-Wen Xie(谢圣文), Jin-Ming Shang(尚金铭), Yun-Hao Zhao(赵云昊), Chen-Yuan Cai(蔡晨元), Ren-Chao Che(车仁超), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2018, 27(12): 128105.
[10]	Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(12): 128501.
[11]	Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展). Chin. Phys. B, 2017, 26(9): 096103.
[12]	Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情). Chin. Phys. B, 2017, 26(3): 036103.
[13]	A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才). Chin. Phys. B, 2017, 26(1): 017701.
[14]	Apodized grating coupler using fully-etched nanostructures Hua Wu(武华), Chong Li(李冲), Zhi-Yong Li(李智勇), Xia Guo(郭霞). Chin. Phys. B, 2016, 25(8): 084212.
[15]	Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊). Chin. Phys. B, 2016, 25(7): 078501.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

A novel highly efficient grating coupler with large filling factor used for optoelectronic integration

Cite this article:

Online attention