The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

doi:10.1088/1674-1056/19/11/117801

Abstract This paper studies the exciton–longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang–Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang–Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton–LO–phonon coupling is strongly affected by the thickness of the cap layer.

Keywords: exciton–longitudinal-optical-phonon InGaN/GaN single quantum well GaN cap layer Huang–Rhys factor

Received: 28 February 2010
Revised: 13 May 2010
Accepted manuscript online:

PACS:	63.20.kk	(Phonon interactions with other quasiparticles)
	63.22.-m	(Phonons or vibrational states in low-dimensional structures and nanoscale materials)
	78.55.Cr	(III-V semiconductors)
	78.67.De	(Quantum wells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876007 and 10974165) and the Research Program of Xiamen Municipal Science and Technology Bureau, China (Grant No. 2006AA03Z110).

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Hu Xiao-Long(胡晓龙), Zhang Jiang-Yong(张江勇), Shang Jing-Zhi(尚景智), Liu Wen-Jie(刘文杰), and Zhang Bao-Ping(张保平) The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 2010 Chin. Phys. B 19 117801

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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

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