Thermal effect mechanism of magnetoresistance in p-type diamond films

doi:10.1088/1674-1056/19/11/117501

Abstract Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.

Keywords: diamond film magnetoresistance valence-band split-off

Received: 22 March 2010
Revised: 17 May 2010
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	73.50.Jt	(Galvanomagnetic and other magnetotransport effects)
	73.61.Cw	(Elemental semiconductors)

Fund: Project supported by the Chongqing City Education Commission of China (Grant No. 040804).

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Qin Guo-Ping(秦国平), Kong Chun-Yang(孔春阳), Ruan Hai-Bo(阮海波), Huang Gui-Juan(黄桂娟), Cui Yu-Ting(崔玉亭), and Fang Liang(方亮) Thermal effect mechanism of magnetoresistance in p-type diamond films 2010 Chin. Phys. B 19 117501

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