Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2010, Vol. 19 Issue (11): 117309    DOI: 10.1088/1674-1056/19/11/117309
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
An analytical threshold voltage model for dual-strained channel PMOSFET
Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi, Shu Bin
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn