Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

doi:10.1088/1674-1056/19/11/117303

Abstract We have studied the cyclotron-resonance absorption and photoluminescence properties of the modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells. It is shown that only the doped sample shows electron cyclotron-resonance absorption. Also, the undoped sample shows two distinctive peaks in the spatially indirect photoluminescence spectra, and the doped one shows only one peak. The results reveal that the high concentration electrons accumulated in ZnSe quantum well layers from n-doped layers can tunnel through BeTe barrier from one well layer to the other. The electron concentration difference between these two well layers originating from the tunneling results in a new additional electric field, and can cancel out a built-in electric field as observed in the undoped structures.

Keywords: type-II quantum wells cyclotron resonance photoluminescence electron tunneling

Received: 17 March 2010
Revised: 22 June 2010
Accepted manuscript online:

PACS:	73.40.Gk	(Tunneling)
	73.63.Hs	(Quantum wells)
	78.55.Et	(II-VI semiconductors)
	78.67.De	(Quantum wells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10844003 and 10874101), the Natural Science Foundation of Shandong Province, China (Grant No. Y2008A10), and the National Basic Research Program of China (Grant No. 2009CB930503).

Cite this article:

Ji Zi-Wu(冀子武), Zheng Yu-Jun(郑雨军), and Xu Xian-Gang(徐现刚) Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells 2010 Chin. Phys. B 19 117303

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Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

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