Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (11): 117106    DOI: 10.1088/1674-1056/19/11/117107
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
Li Ya-Weia, Hu Zhi-Gaoa, Sun Lina, Yang Ping-Xionga, Yue Fang-Yub, Chu Jun-Haob, Chen Luc
a Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; b Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; c Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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