Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

doi:10.1088/1674-1056/19/11/117106

Abstract Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg_1-xCd_xTe (x≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra. The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, commonly assumed to be more favourable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x≈ 0.39), (ii) the density of V_Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V_Hg will lead to a short-wavelength shift of epilayers, and (iii) the V_Hg prefers forming the V_Hg–As_Hg complex when the inactivated-As (As_Hg or related) coexists in a certain density, which makes it difficult to annihilate V_Hg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.

Keywords: As-doped HgCdTe annealing influence extrinsic/intrinsic impurities modulated photoluminescence spectra

Received: 22 April 2010
Revised: 21 June 2010
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	78.55.Et	(II-VI semiconductors)
	78.66.Hf	(II-VI semiconductors)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2007CB924901), Shanghai Leading Academic Discipline Project (Grant No. B411), National Natural Science Foundation of China (Grant No. 60906043), Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800), Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010), and the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU).

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Yue Fang-Yu(越方禹), Chen Lu(陈璐), Li Ya-Wei(李亚巍), Hu Zhi-Gao(胡志高), Sun Lin(孙琳), Yang Ping-Xiong(杨平雄), and Chu Jun-Hao(褚君浩) Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy 2010 Chin. Phys. B 19 117106

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Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

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