Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

doi:10.1088/1674-1056/19/10/107504

Abstract Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic $\tau$-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

Keywords: L1₀ $\tau$–MnAl buffer layer

Received: 26 March 2010
Revised: 10 May 2010
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	68.55.A-	(Nucleation and growth)
	75.30.Cr	(Saturation moments and magnetic susceptibilities)
	75.60.Ej	(Magnetization curves, hysteresis, Barkhausen and related effects)
	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
	81.15.Cd	(Deposition by sputtering)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60490290, 60678008, 10604016, 50771032, and 50771033), and the National Basic Research Program of China (Grant No. 2009CB929201).

Cite this article:

Zhang Xu-Hui(张旭辉), Ma Bin(马斌), Zhang Zong-Zhi(张宗芝), and Jin Qing-Yuan(金庆原) Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films 2010 Chin. Phys. B 19 107504

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Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

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