Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

doi:10.1088/1674-1056/19/10/106802

Abstract The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Keywords: InGaN In-plane grazing incidence x-ray diffraction reciprocal space mapping biaxial strain

Received: 23 February 2010
Revised: 17 May 2010
Accepted manuscript online:

PACS:	61.05.cp	(X-ray diffraction)
	62.20.D-	(Elasticity)
	68.55.-a	(Thin film structure and morphology)
	68.60.Bs	(Mechanical and acoustical properties)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003), the National Basic Research Programme of China (Grant No. 2007CB936700) and the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017).

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Guo Xi(郭希), Wang Hui(王辉), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Zhang Shu-Ming(张书明), and Yang Hui(杨辉) Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 2010 Chin. Phys. B 19 106802

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Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

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