Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

doi:10.1088/1674-1056/19/1/018101

Abstract Non-polar a-plane (1$1\bar{2}$0) GaN films have been grown on r-plane (1$\bar{1}$02) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [1$\bar{1}$00] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.

Keywords: non-polar GaN V/III ratio anisotropy migration length

Received: 27 April 2009
Revised: 04 June 2009
Accepted manuscript online:

PACS:	68.43.Jk	(Diffusion of adsorbates, kinetics of coarsening and aggregation)
	66.30.H-	(Self-diffusion and ionic conduction in nonmetals)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	68.55.A-	(Nucleation and growth)
	78.60.Hk	(Cathodoluminescence, ionoluminescence)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028) and the National Basic Research Program of China (Grant No. 2007CB307004) and the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018).

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Zhao Lu-Bing(赵璐冰), Yu Tong-Jun(于彤军), Wu Jie-Jun(吴洁君), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films 2010 Chin. Phys. B 19 018101

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Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

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