Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/19/1/017306

Abstract SiN$_x$ is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN$_x$ passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN$_x$ films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.

Keywords: SiN_x passivation plasma-enhanced chemical vapour deposition AlGaN/GaN heterostructure current collapse

Received: 20 May 2009
Revised: 22 June 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	52.77.Dq	(Plasma-based ion implantation and deposition)
	73.21.-b	(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.65.Rv	(Passivation)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105), and the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321).

Cite this article:

Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) Effects of SiN_x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors 2010 Chin. Phys. B 19 017306

[1]	Baliga B J 1996 IEEE Trans. Electron Devices 43 1717
[2]	Liu J, Zhou Y G, Zhu J, Lau K M and Chen K J 2006 IEEE Electron Device Lett. 27 10
[3]	Chumbes E M, Smart J A, Prunty T and Shealy J R 2000 Proc. Int. Electron Device Meeting p385
[4]	Yue Y Z, Hao Y, Zhang J C, Feng Q, Ni J Y and Ma X H 2008 Chin. Phys. B 17 1405
[5]	Chang M J and Lee J L 2005 Appl. Phys. Lett. 85 172101
[6]	Tan W S, Houston P A, Hill G, Airey R J and Parbook P J 2004 J. Electron Mat. 33 400
[7]	Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J and Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese)
[8]	Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F, Koleske D D, Wickenden A E and Henry R L 2003 Appl. Phys. Lett. 83 1650
[9]	Bernát J, Wolter M, Javorka P, Fox A, Marso M and Kordo P 2004 Solid-State Electron. 48 1825
[10]	Binari S C, Ikossi K, Roussos J A, Kruppa W, Park D, Dietrich H B, Koleske D D, Wickenden A E and Henry R L 2001 IEEE Trans. Electron Devices 48
	465
[11]	Kohn E, Daumiller I, Schmid P, Nguyen N X and Nguyen C N 2001 Electron. Lett. 35 1022
[12]	Daumiller I, Theron D, Gaqui\`ere C, Vescan A, Dietrich R, Wieszt A, Leier H, Vetury R, Mishra U K, Smorchkova I P, Keller S, Nguyen N X, Nguyen C N
	and Kohn E 2001 IEEE Electron Device Lett. 22 62
[13]	Myers F R and Cale T S 1992 J. Electrochem. Soc. 139] 3587
[14]	Myers F R, Ramaswami M and Cale T S 1994 J. Electrochem. Soc. 141 1313

[1]	A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.
[2]	Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation Yue-Bo Liu(柳月波), Jun-Yu Shen(沈俊宇), Jie-Ying Xing(邢洁莹), Wan-Qing Yao(姚婉青), Hong-Hui Liu(刘红辉), Ya-Qiong Dai(戴雅琼), Long-Kun Yang(杨隆坤), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君). Chin. Phys. B, 2021, 30(11): 117302.
[3]	Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军). Chin. Phys. B, 2015, 24(4): 048503.
[4]	Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors Yang Ming (杨铭), Lin Zhao-Jun (林兆军), Zhao Jing-Tao (赵景涛), Wang Yu-Tang (王玉堂), Li Zhi-Yuan (李志远), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红). Chin. Phys. B, 2015, 24(11): 117103.
[5]	Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军). Chin. Phys. B, 2013, 22(7): 077102.
[6]	Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪). Chin. Phys. B, 2013, 22(6): 067104.
[7]	A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics Lü Yuan-Jie (吕元杰), Lin Zhao-Jun (林兆军), Yu Ying-Xia (于英霞), Meng Ling-Guo (孟令国), Cao Zhi-Fang (曹芝芳), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国). Chin. Phys. B, 2012, 21(9): 097104.
[8]	Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection Wang Zhi-Gang (汪志刚), Chen Wan-Jun (陈万军), Zhang Jing (张竞), Zhang Bo (张波), Li Zhao-Ji (李肇基 ). Chin. Phys. B, 2012, 21(8): 087305.
[9]	Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) . Chin. Phys. B, 2011, 20(9): 097106.
[10]	Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study Bi Zhi-Wei(毕志伟), Hu Zhen-Hua(胡振华), Mao Wei(毛维), Hao Yue(郝跃), Feng Qian(冯倩), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), Zhang Jin-Cheng(张进成), Ma Xiao-Hua(马晓华), Chang Yong-Ming(常永明), Li Zhi-Ming(李志明), and Mei Nan(梅楠). Chin. Phys. B, 2011, 20(8): 087307.
[11]	Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN Liu Fang(刘芳), Qin Zhi-Xin(秦志新), Xu Fu-Jun(许福军), Zhao Sheng(赵胜), Kang Xiang-Ning(康香宁), Shen Bo(沈波), and Zhang Guo-Yi(张国义). Chin. Phys. B, 2011, 20(6): 067303.
[12]	Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) . Chin. Phys. B, 2011, 20(4): 047105.
[13]	High temperature characteristics of AlGaN/GaN high electron mobility transistors Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) . Chin. Phys. B, 2011, 20(11): 117302.
[14]	Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高). Chin. Phys. B, 2010, 19(4): 047301.
[15]	Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition Yang Hang-Sheng(杨杭生), Nie An-Min(聂安民), and Qiu Fa-Min(邱发敏). Chin. Phys. B, 2010, 19(1): 017202.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

Cite this article:

Online attention

Effects of SiN_x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors