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Chin. Phys. B, 2010, Vol. 19(1): 014601    DOI: 10.1088/1674-1056/19/1/014601
CLASSICAL AREAS OF PHENOMENOLOGY Prev   Next  

Valence band variation in Si (110) nanowire induced by a covered insulator

Xu Hong-Hua(许洪华)a), Liu Xiao-Yan(刘晓彦)a)†, He Yu-Hui(何毓辉)a), Fan Chun(樊春)b), Du Gang(杜刚)a), Sun Ai-Dong(孙爱东)b), Han Ru-Qi(韩汝琦)a), and Kang Jin-Feng(康晋锋)a)
a Institute of Microelectronics, Peking University & Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China; b Computer Center of Peking University, Beijing 100871, China
Abstract  In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6 × 6k $\cdot$ p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO2 insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO2 insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO2 insulator, the strain of the HfO2 gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO2 insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design.
Keywords:  silicon nanowire      valence band      thermal residual strain  
Received:  04 May 2009      Revised:  30 June 2009      Accepted manuscript online: 
PACS:  73.22.-f (Electronic structure of nanoscale materials and related systems)  
  62.25.-g (Mechanical properties of nanoscale systems)  
  71.15.-m (Methods of electronic structure calculations)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.65.Mq (Oxidation)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2006CB302705) and the Foundation for Key Program of Ministry of Education, China (Grant No. 107003).

Cite this article: 

Xu Hong-Hua(许洪华), Liu Xiao-Yan(刘晓彦), He Yu-Hui(何毓辉), Fan Chun(樊春), Du Gang(杜刚), Sun Ai-Dong(孙爱东), Han Ru-Qi(韩汝琦), and Kang Jin-Feng(康晋锋) Valence band variation in Si (110) nanowire induced by a covered insulator 2010 Chin. Phys. B 19 014601

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