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Chin. Phys. B, 2009, Vol. 18(9): 3995-3999    DOI: 10.1088/1674-1056/18/9/063
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic[1.8mm] Science and Technology of China, Chengdu 610054, China
Abstract  In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.
Keywords:  4H-SiC      bipolar junction transistor (BJT)      buried layer      current gain  
Received:  10 November 2008      Revised:  20 January 2009      Accepted manuscript online: 
PACS:  85.30.Pq (Bipolar transistors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  

Cite this article: 

Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟) A novel structure of a high current gain 4H-SiC BJT with a buried layer in base 2009 Chin. Phys. B 18 3995

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