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Chin. Phys. B, 2009, Vol. 18(8): 3490-3494    DOI: 10.1088/1674-1056/18/8/059
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉)
School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm-2. After radiation, the forward currents of the SBDs at 2 V decreased by about 50%, and the reverse currents at -200 V increased by less than 30%. Schottky barrier height ($\phi_{\rm B}$) of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias, and decreased from 1.25 eV to 1.19 eV under -30 V irradiation bias. The degradation of $\phi_{\rm B}$ could be explained by the variation of interface states of Schottky contacts. The on-state resistance (Rs) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance ($\rho_{\rm c}$) of the Ni/SiC Ohmic contact increased from 5.11× 10$\Omega\cdot$cm2 to 2.97×10-4 $\Omega\cdot$cm2.
Keywords:  silicon carbide      Schottky barrier diode      Ohmic contact      electron radiation  
Received:  08 December 2008      Revised:  19 March 2009      Accepted manuscript online: 
PACS:  85.30.Kk (Junction diodes)  
  61.80.Fe (Electron and positron radiation effects)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.Cg (Contact resistance, contact potential)  
  73.40.Ns (Metal-nonmetal contacts)  
Fund: Project~supported~by~the National Natural Science Foundation of China (Grant No 60606022), the Xian Applied Materials Foundation (Grant No XA-AM-200702) and the Advanced Research Foundation (Grant No 9140A08050508).

Cite this article: 

Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact 2009 Chin. Phys. B 18 3490

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