The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment
Feng Qian(冯倩)†, Tian Yuan(田园), Bi Zhi-Wei(毕志伟), Yue Yuan-Zheng(岳远征), Ni Jin-Yu(倪金玉), Zhang Jin-Cheng(张进成), Hao Yue(郝跃)‡, and Yang Lin-An(杨林安)
School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT), with Al2O3 deposited by atomic layer deposition. The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3/AlGaN interface was pretreated by N2 plasma. Furthermore, effects of N2 plasma pretreatment on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.
Received: 31 October 2008
Revised: 25 December 2008
Accepted manuscript online:
Fund: Project
supported by National Advanced Research Program (Grant No
51308030102) and Xi'an Applied Materials Innovation Fund (Grant No
XA-AM-200616) and National Natural Science Foundation of China
(Grant Nos 60506020 and 60676048).
Cite this article:
Feng Qian(冯倩), Tian Yuan(田园), Bi Zhi-Wei(毕志伟), Yue Yuan-Zheng(岳远征), Ni Jin-Yu(倪金玉), Zhang Jin-Cheng(张进成), Hao Yue(郝跃), and Yang Lin-An(杨林安) The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment 2009 Chin. Phys. B 18 3014
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